High-temperature Resistant Interconnections Formed by Ni Nanoparticles/Al Micro-particles Composite Paste for SiC Power Device Application

Sintering bonding using metal nanoparticles is considered a promising die-attach technique for high-temperature operating power devices, such as SiC. However, the thermal stress produced by difference in coefficient of expansion (CTE) between chip and substrate, often affects reliability this technique. To address limitation, we analyzed sintering Ni Al microparticles composite paste. The results revealed that significantly reduced voids cracks layer formed Three chips with different sizes were bonded to Cu substrates, strength was measured. result strengths samples higher than those conventional nanoparticles. In addition, fracture observation after shear test particles suffered plastic deformation. Furthermore, storage at 250°C confirmed long-term reliability.